鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate-source cutoff voltage
Drain-source ON resistance
Mutual conductance
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Symbol
V
GDS
I
DSS
I
GSS
V
GSC
R
DS(on)
gm
C
iss
C
oss
C
rss
Conditions
I
C
= 鈭?0 碌A(chǔ),
V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
= 鈭?0
V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
碌A(chǔ)
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1.8
鈭?.5
300
2.5
7
1.5
1.5
Min
鈭?0
0.2
6.0
鈭?0
鈭?.5
Typ
Max
Unit
V
mA
nA
V
鈩?/div>
mS
pF
pF
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2003
SJJ00223BED
5藲
4: Gate (FET2)
5: Gate (FET1)
0.2
鹵0.1
1
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