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XP0D873|XP1D873 Datasheet

  • XP0D873|XP1D873

  • Composite Device - Diodes - Composite Diodes

  • 3頁

  • ETC

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Composite Transistors
XP0D873
(XP1D873)
Silicon N-channel junction FET
Unit: mm
0.425
For analog switching
鈻?/div>
Features
鈥?/div>
Two elements incorporated into one package
鈥?/div>
Reduction of the mounting area and assembly cost by one half
0.20
鹵0.05
5
4
0.12
+0.05
鈥?.02
1.25
鹵0.10
2.1
鹵0.1
1
0.65
2
0.65
3
鈻?/div>
Basic Part Number
鈥?/div>
2SK1103
2
10藲
1.3
鹵0.1
2.0
鹵0.1
0.9
鹵0.1
Parameter
Gate-drain surrender voltage
Drain current
Gate current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
T
T
ch
T
stg
Rating
鈭?0
30
10
150
150
鈭?5
to
+150
Unit
V
mA
mA
mW
擄C
擄C
1: Source (FET1)
2: Drain
3: Source (FET2)
EIAJ: SC-88A
0 to 0.1
0.9
+0.2
鈥?.1
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
SMini5-G1 Package
Marking Symbol: OC
Internal Connection
5
FET1
4
FET2
1
2
3
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
3擄C
Parameter
Gate-drain surrender voltage
Drain-source cutoff current
Gate-source cutoff current
Gate-source cutoff voltage
Drain-source ON resistance
Mutual conductance
Short-circuit forward transfer
capacitance (Common-source)
Short-circuit output capacitance
(Common-source)
Reverse transfer capacitance
(Common-source)
Symbol
V
GDS
I
DSS
I
GSS
V
GSC
R
DS(on)
gm
C
iss
C
oss
C
rss
Conditions
I
C
= 鈭?0 碌A(chǔ),
V
DS
=
0
V
DS
=
10 V, V
GS
=
0
V
GS
= 鈭?0
V, V
DS
=
0
V
DS
=
10 V, I
D
=
10
碌A(chǔ)
V
DS
=
10 mV, V
GS
=
0
V
DS
=
10 V, I
D
=
1 mA, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
1.8
鈭?.5
300
2.5
7
1.5
1.5
Min
鈭?0
0.2
6.0
鈭?0
鈭?.5
Typ
Max
Unit
V
mA
nA
V
鈩?/div>
mS
pF
pF
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: December 2003
SJJ00223BED
5藲
4: Gate (FET2)
5: Gate (FET1)
0.2
鹵0.1
1

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